Thermal and Sensitivity Analysis of Multi-Fin Devices

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dc.contributor.author Swahn, B. en_US
dc.contributor.author Hassoun, S. en_US
dc.date.accessioned 2006-12-12T13:48:18Z
dc.date.available 2006-12-12T13:48:18Z
dc.date.issued 2006 en_US
dc.identifier.citation Proceedings of 12th International Workshop on Thermal investigations of ICs, THERMINIC 2006, p. 229-234 en_US
dc.identifier.isbn 2-916187-04-9 en_US
dc.identifier.other handle TIMA en_US
dc.identifier.uri http://hdl.handle.net/2042/6582
dc.description.abstract As device dimensions shrink into the nanometer range, power and performance constraints prohibit the longevity of traditional MOS devices in circuit design. A finFET, a quasi-planar double-gated device, has emerged as a replacement. FinFETs are formed by creating a silicon em fin which protrudes out of the wafer, wrapping a gate around the fin, and then doping the ends of the fin to form the source and drain. Wider finFETs are formed using multiple fins between the source and drain regions. While finFETs provide promising electrostatic characteristics, they, like other ultra-thin body nano devices, have the potential to suffer from significant self heating. We study in this paper self heating in multi-fin devices. We first propose a distributed thermal channel model and validate it using ANSYS. We use this model to study the electro-thermal properties of multi-fin devices with both flared and rectangular channel extensions. We analyze variations in fin geometric parameters such as fin width, gate length, and fin and gate height, and we investigate the impact on thermal sensitivity. We utilize a thermal sensitivity metric, METS, to characterize device thermal robustness. We provide experimental data to validate our findings. Our work is novel as it is the first to address thermal issues within multi-fin devices. Furthermore, it provides an impetus for further research on the emerging area of electro-thermal device and circuit design. en_US
dc.format.extent 194089 bytes
dc.format.mimetype application/pdf
dc.language.iso EN en_US
dc.publisher TIMA Editions , Grenoble, France en_US
dc.rights http://irevues.inist.fr/utilisation en_US
dc.source Proceedings of 12th International Workshop on Thermal investigations of ICs, THERMINIC 2006, p. 229-234 en_US
dc.subject FinFETs, Electro-thermal simulation,sensitivity metric en_US
dc.title Thermal and Sensitivity Analysis of Multi-Fin Devices en_US
dc.type Conference proceeding en_US
dc.contributor.affiliation Tufts University - Tufts University [United States] en_US
dc.contributor.affiliation Tufts University - Tufts University [United States] en_US


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