Thermal Design of Power Semiconductor Modules for Mobile Communication Systems

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dc.contributor.author Osone, Y. en_US
dc.date.accessioned 2006-12-12T13:48:09Z
dc.date.available 2006-12-12T13:48:09Z
dc.date.issued 2006 en_US
dc.identifier.citation Proceedings of 12th International Workshop on Thermal investigations of ICs, THERMINIC 2006, p. 86-90 en_US
dc.identifier.isbn 2-916187-04-9 en_US
dc.identifier.other handle TIMA 2243/therminic2006_TDP86 en_US
dc.identifier.uri http://hdl.handle.net/2042/6577
dc.description.abstract We will describe the thermal performance of power semiconductor module, which consists of hetero-junction bipolar transistors (HBTs), for mobile communication systems. We calculate the thermal resistance between the HBT fingers and the bottom surface of a multi-layer printed circuit board (PCB) using a finite element method (FEM). We applied a steady state analysis to evaluate the influence of design parameters on thermal resistance of the module. We found that the thickness of GaAs substrate, the thickness of multi-layer circuit board, the thermal conductivity of bonding material under GaAs substrate, and misalignment of thermal vias between each layer of PCB are the dominant parameter in thermal resistance of the module. en_US
dc.format.extent 239737 bytes
dc.format.mimetype application/pdf
dc.language.iso EN en_US
dc.publisher TIMA Editions , Grenoble, France en_US
dc.rights http://irevues.inist.fr/utilisation en_US
dc.source Proceedings of 12th International Workshop on Thermal investigations of ICs, THERMINIC 2006, p. 86-90 en_US
dc.subject Power Amplifier, Cell Phone, Thermal Simulation, FEM en_US
dc.title Thermal Design of Power Semiconductor Modules for Mobile Communication Systems en_US
dc.type Conference proceeding en_US
dc.contributor.affiliation Mechanical Engineering Research Laboratory - Hitachi, Ltd. [Japan] en_US


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