A Temperature Analysis of High-power AlGaN/GaN HEMTs

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dc.contributor.author Das, J. en_US
dc.contributor.author Oprins, H. en_US
dc.contributor.author Ji, H. en_US
dc.contributor.author Sarua, A. en_US
dc.contributor.author Ruythooren, W. en_US
dc.contributor.author Derluyn, J. en_US
dc.contributor.author Kuball, M. en_US
dc.contributor.author Germain, M. en_US
dc.contributor.author Borghs, G. en_US
dc.date.accessioned 2006-12-12T13:48:05Z
dc.date.available 2006-12-12T13:48:05Z
dc.date.issued 2006 en_US
dc.identifier.citation Proceedings of 12th International Workshop on Thermal investigations of ICs, THERMINIC 2006, p. 38-41 en_US
dc.identifier.isbn 2-916187-04-9 en_US
dc.identifier.other handle TIMA 2243/therminic_TAHP38 en_US
dc.identifier.uri http://hdl.handle.net/2042/6575
dc.description.abstract Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding performance combined together with low cost and high flexibility can be obtained using a System-in-a-Package (SIP) approach. Since thermal management is extremely important for these high power applications, a hybrid integration of the HEMT onto an AlN carrier substrate is proposed. In this study we investigate the temperature performance for AlGaN/GaN HEMTs integrated onto AlN using flip-chip mounting. Therefore, we use thermal simulations in combination with experimental results using micro-Raman spectroscopy and electrical dc-analysis. en_US
dc.format.extent 207856 bytes
dc.format.mimetype application/pdf
dc.language.iso EN en_US
dc.publisher TIMA Editions , Grenoble, France en_US
dc.rights http://irevues.inist.fr/utilisation en_US
dc.source Proceedings of 12th International Workshop on Thermal investigations of ICs, THERMINIC 2006, p. 38-41 en_US
dc.subject HEMT, GaN, micro-Raman, finite element modeling en_US
dc.title A Temperature Analysis of High-power AlGaN/GaN HEMTs en_US
dc.type Conference proceeding en_US
dc.contributor.affiliation Interuniversity Micro Electronics Center - Imec [Belgium] en_US
dc.contributor.affiliation IMEC - IMEC [Belgium] en_US
dc.contributor.affiliation H.H. Wills Physics Laboratory - University of Bristol [United Kingdom] en_US
dc.contributor.affiliation H.H. Wills Physics Laboratory - University of Bristol [United Kingdom] en_US
dc.contributor.affiliation Interuniversity Micro Electronics Center - Imec [Belgium] en_US
dc.contributor.affiliation Interuniversity Micro Electronics Center - Imec [Belgium] en_US
dc.contributor.affiliation H.H. Wills Physics Laboratory - University of Bristol [United Kingdom] en_US
dc.contributor.affiliation Interuniversity Micro Electronics Center - Imec [Belgium] en_US
dc.contributor.affiliation Interuniversity Micro Electronics Center - Imec [Belgium] en_US


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