A Temperature Analysis of High-power AlGaN/GaN HEMTs

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URI: http://hdl.handle.net/2042/6575
Title: A Temperature Analysis of High-power AlGaN/GaN HEMTs
Author: Das, J.; Oprins, H.; Ji, H.; Sarua, A.; Ruythooren, W.; Derluyn, J.; Kuball, M.; Germain, M.; Borghs, G.
Abstract: Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding performance combined together with low cost and high flexibility can be obtained using a System-in-a-Package (SIP) approach. Since thermal management is extremely important for these high power applications, a hybrid integration of the HEMT onto an AlN carrier substrate is proposed. In this study we investigate the temperature performance for AlGaN/GaN HEMTs integrated onto AlN using flip-chip mounting. Therefore, we use thermal simulations in combination with experimental results using micro-Raman spectroscopy and electrical dc-analysis.
Subject: HEMT, GaN, micro-Raman, finite element modeling
Publisher: TIMA Editions , Grenoble, France
Date: 2006

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