Electrostatically-driven resonator on SOI with improved temparature stability

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URI: http://hdl.handle.net/2042/6496
Title: Electrostatically-driven resonator on SOI with improved temparature stability
Author: Giridhar, A.; Verjus, F.; Marty, F.; Bosseboeuf, A.; Bourouina, T.
Abstract: This paper deals with a single-crystal-silicon (SCS) MEMS resonator with improved temperature stability. While simulations have shown that the temperature coefficient of resonant frequency can be down to 1 ppm/°C, preliminary measurements on non-optimised structures gave evidence of a temperature coefficient of 29 ppm/°C. Design, optimisation, experimental results with post process simulation and prospective work are presented.
Subject: Resonator, temperature stability
Publisher: TIMA Editions , Grenoble, France
Date: 2006

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