Thermal modelling of multi-finger AlGaN/GaN HEMTs

Show full item record

Files in this item

PDF 1038-3.pdf 677.1Kb

Pour citer ce document :
URI: http://hdl.handle.net/2042/6442
Title: Thermal modelling of multi-finger AlGaN/GaN HEMTs
Author: Oprins, H.; Das, J.; Vandersmissen, R.; Vandevelde, B.; Germain, M.; Ruythooren, W.
Abstract: AlGaN/GaN high electron mobility transistors (HEMTs) are very promising for high power applications at microwave frequencies. The heterostructures are usually grown on SiC or sapphire substrates. Sapphire substrates are relatively cheap, but their low thermal conductivity is a major disadvantage. To improve the thermal performance, a hybrid integration of the HEMT onto an AlN carrier substrate is proposed. In this study we compare two different hybrid integration schemes for multi-finger HEMTs : a flip-chip integration and an integration where the sapphire substrate is removed by laser lift-off.
Subject: Thermal modelling HEMTs temperature measurements
Publisher: TIMA Editions , Grenoble, France
Date: 2006

This item appears in the following Collection(s)

Show full item record





Advanced Search