Atomistic Modeling of Boron Activation and Diffusion in Strained SiGe

Show full item record

Files in this item

PDF 1040.pdf 270.6Kb

Pour citer ce document :
URI: http://hdl.handle.net/2042/6281
Title: Atomistic Modeling of Boron Activation and Diffusion in Strained SiGe
Author: Dunham, S.; Song, J.; Ahn, C.
Abstract: Diffusion silicon boron activation modeling stress strain CMOSWe used a combination of atomistic models, DFT and KLMC, to analyze the complex issues associated with B diffusion and activation in nanoscale Si devices. Using DFT, we developed general models which separate out global strain from local binding of B with Ge in Si1-yGey alloys for both substitutional B as well as the Bi transition state which controls diffusion. The models were used to derive segregation/activation and diffusion of boron as a function of Ge content, plus any additional applied stress. We found that the increase of segregation and activation in strained Si1-yGey alloys is mainly due to the effect of strain rather than binding, with model accurately predicting experimental observations. B diffusion in SiGe is a complex system due to multi-step diffusion process, anisotropic strain and multiplicity of local Ge arrangements. By using DFT calculations spanning a range of Ge configurations and strain conditions, we are able to identify the mechanisms leading to retarded B diffusion : a combination of local Bi-Ge repulsion and global strain interactions. KLMC using DFT parameters predicts experimental results accurately up to 50% Ge.
Description: 126-130
Subject: Diffusion silicon boron activation modeling stress strain CMOS
Publisher: TIMA Editions , Grenoble, France
Date: 2006

This item appears in the following Collection(s)

Show full item record





Advanced Search