Electrical Characterisation of Ultra-thin SAM Structures

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URI: http://hdl.handle.net/2042/6262
Title: Electrical Characterisation of Ultra-thin SAM Structures
Author: Trapes, C.; Patrone, L.; Rouai, L.
Abstract: Self-assembly-molecule (SAM) Current-voltage measurement Capacitance-voltage measurement sputtering aluminum dots Schottky diodeThe way of reduction of metal oxyde semiconductor (MOS) structures is going to reach limitations and new devices have to be explored as an alternative to MOS technology. Molecular electronic and more particularly self-assembly-molecular technique on silicon substrate gives interesting results as seen in the literature. We are going to study n-alkyltrichlorosilane grafting on oxidised silicon, characterise it macroscopically with ellipsometer and goniometry measurements, and down to microscopic scale with atomic force microscopy. Once the uniformity of the monolayer is verified (roughness of few Angströms) we have tested a sputtering method deposition to form aluminium dots onto the surface. Also metal-insulator-semiconductor diodes are tested measuring both leakage current between gate and substrate and capacitance-voltage. The sputtering method deposition can be improved in order to decrease the gate leakage current and we would like to test another evaporation method. Further application we want to study is gas sensors using conjugated organic films or synthetic polymers and concerns the drift current with gas absorption.
Description: 55-57
Subject: Self-assembly-molecule (SAM) Current-voltage measurement Capacitance-voltage measurement sputtering aluminum dots Schottky diode
Publisher: TIMA Editions , Grenoble, France
Date: 2006

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