Low temperature investigation of electrical conduction in polysilicon : simulation and experiment

Show full item record

Files in this item

PDF 1007.pdf 243.4Kb

Pour citer ce document :
URI: http://hdl.handle.net/2042/6259
Title: Low temperature investigation of electrical conduction in polysilicon : simulation and experiment
Author: Ecoffey, S.; Mahapatra, S.; Pott, V.; Bouvet, D.; Reimbold, G.; Ionescu, A.-M.
Abstract: Nanograin polysilicon low temperature stochastic Coulomb oscillations Monte Carlo simulationInvestigation of electrical conduction in polysilicon nanowires (polySiNW) with nanograins (5 to 20nm), based on Monte Carlo (MC) simulations and electrical measurements from 4K to 300K are presented. Some irregular Coulomb Oscillations (CO) are observed at temperatures lower than 200K showing several period widths due to the random distribution in grain size (5-20nm). A remarkable result consists in more effective oscillations observed at intermediate range of temperatures (between 25K and 150K) and high drain voltages. The temperature dependence of COs is explained by the fact that in a multiple asymmetric dot system at low temperature, COs are observed not at the lowest but at an intermediate temperature range, whereas the drain voltage dependence is due to an enhanced non-resonant tunneling. MC simulations have confirmed experimental observations.
Description: 51-54
Subject: Nanograin polysilicon low temperature stochastic Coulomb oscillations Monte Carlo simulation
Publisher: TIMA Editions , Grenoble, France
Date: 2006

This item appears in the following Collection(s)

Show full item record





Advanced Search