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(EDA Publishing Association, Grenoble, France, 2007)A simple and fast process for micro-electromechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented in this paper. Thin SOI wafers are important for advanced CMOS technology and thus are evaluated as resonator substrates for future co-integration with CMOS circuitry on a single chip. As the transduction capacitance scales with the resonator thickness, it is important to fabricate deep sub-micron trenches in order to achieve a good capacitive coupling. Through the combination of conventional UV-lithography and focused ion beam (FIB) milling the process needs only two lithography steps, enabling therefore a way for fast prototyping of MEM-resonators. Different FIB parameters and etching parameters are compared in this paper and their effect on the process are reported....
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A FULLY PARAMETERIZED FEM MODEL FOR ELECTROMAGNETIC OPTIMIZATION OF AN RF MEMS WAFER LEVEL PACKAGE (EDA Publishing Association, Grenoble, France, 2007)In this paper we present our efforts in characterizing and optimizing the influence of a Wafer-Level Packaging (WLP) solution on the electromagnetic behaviour of RF-MEMS devices. To this purpose, a fully parameterized FEM model of a packaged Coplanar Waveguide (CPW) is presented in order to optimize all the technology degrees of freedom (DoFs) made available by the fabrication process of the capping part. The model is implemented within the Ansoft HFSSTM electromagnetic simulator, after its validation against experimental data. Moreover, a simulation approach of a capped RF-MEMS varactor is shown. It is implemented in the Spectre© simulator within Cadence© environment. The MEMS part is treated by means of a compact model library implemented in VerilogA© language. A lumped elements network accounting for the parasitics surrounding the intrinsic RF-MEMS varactor is extracted from experimental data. Finally, the S-parameters description of the package, obtained by Ansoft HFSSTM simulations, is included in the Spectre© schematic....
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(EDA Publishing Association, Grenoble, France, 2007)In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 7 µm high, 2.0 aspect ratio was formed. The dimensions of the cantilever are 250ճ0ձ5 µm. The open structure of the waveguide at the tip of the probe was obtained by using FIB fabrication. AFM image and profile analysis for a standard sample obtained by the fabricated GaAs microwave probe and commercial Si AFM probe indicate that the fabricated probe has the similar capability for the measurement of topography of materials....
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(EDA Publishing Association, Grenoble, France, 2007)The very significant growth of the wireless communication industry has spawned tremendous interest in the development of high performances radio frequencies (RF) components. Micro Electro Mechanical Systems (MEMS) are good candidates to allow reconfigurable RF functions such as filters, oscillators or antennas. This paper will focus on the MEMS electromechanical resonators which show interesting performances to replace SAW filters or quartz reference oscillators, allowing smaller integrated functions with lower power consumption. The resonant frequency depends on the material properties, such as Young's modulus and density, and on the movable mechanical structure dimensions (beam length defined by photolithography). Thus, it is possible to obtain multi frequencies resonators on a wafer. The resonator performance (frequency, quality factor) strongly depends on the environment, like moisture or pressure, which imply the need for a vacuum package. This paper will present first resonator mechanisms and mechanical behaviors followed by state of the art descriptions with applications and specifications overview. Then MEMS resonator developments at STMicroelectronics including FEM analysis, technological developments and characterization are detailed....
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