A Modular High-Temperature Measurement Set-Up for Semiconductor Device Characterization

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URI: http://hdl.handle.net/2042/14683
Title: A Modular High-Temperature Measurement Set-Up for Semiconductor Device Characterization
Author: Borthen, P.; Wachutka, G.
Abstract: We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room temperature up to 500°C and higher. A detailed description of the experimental aquipment is given. Its practical use is demonstrated by measuring temperature-dependent charcteristics of silicon VDMOSFET and IGBT devices as well as SiC-diodes. For the silicon devices, numerical simulations based on recently developed high temperature physical models were also performed in order to gain a deeper understanding of the measured data, together with a revalidation of the model parameters.
Subject: High-temperature electronics, high-temperature measurement, physical models
Publisher: EDA Publishing Association, Grenoble, France
Date: 2007

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