MODIFICATION OF BAND-GAP IN SURFACE LAYER OF CDZNTE BY YAG:Nd+3 LASER RADIATION

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URI: http://hdl.handle.net/2042/14140
Title: MODIFICATION OF BAND-GAP IN SURFACE LAYER OF CDZNTE BY YAG:Nd+3 LASER RADIATION
Author: Medvid, A.; Mychko, Aleksandr; Fedorenko, L.; Korbutjak, B.; Kryluk, S.; Onufrievs, P.
Abstract: According to the effect, the interstitial atoms of Cd (Cdi) in Cd1-xZnxTe move along the temperature gradient while the Cd vacancies (VCd) and Zn atoms - in the opposite direction, into the bulk of the semiconductor where temperature is lower. Photoluminescence spectra studied at 5 K show that concentration of Cd atoms increases, but concentration of Zn atoms decreases at the surface due to redistribution atoms in temperature gradient of field. Formation of a graded band gap in Cd1- xZnxTe crystal at irradiation by the second harmonic of Nd:YAG laser is found.
Publisher: EDAP Editions , Grenoble, France
Date: 2007

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